In Situ Biasing TEM Characterization of Resistive Switching Phenomena in TiO2-based RRAM
نویسندگان
چکیده
Oxygen vacancy motion and agglomeration into Magnéli phases are often associated with resistive switching in TiO2 [1-2]. However, the defect distribution and changes of device resistance are still poorly linked and require direct analysis. Extensive ex situ analysis has lead to proposed switching mechanisms that invoke defect formation/motion, but direct observation of defect evolution is still lacking. Here, we report direct observation of Wadsley defect formation and evolution in relation to Magnéli phases and resistive switching using in situ electrical testing of single-crystal TiO2-based devices inside the transmission electron microscope (TEM). This enables us to monitor structural transformations that accompany resistive switching.
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